Infineon BCR162E6327 PNP pre-biased transistor, Automotive AEC-Q101, 50 V VCEO, 100 mA IC, 200 mW, SOT-23-3 package.
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101 |
| Mounting | Surface Mount |
| FET type | PNP - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 20 @ 5mA, 5V |
| Power - max | 200 mW |
| Frequency - transition | 200 MHz |
| Package | Bulk |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Resistor - base (R1) | 4.7 kOhms |
| Resistor - emitter base (R2) | 4.7 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 500µA, 10mA |
The 200 mW power dissipation limit in the SOT-23-3 footprint means you need to check the load duty cycle. At 100 mA and a 300 mV Vce(sat) the on-state dissipation is 30 mW, leaving plenty of headroom for switching losses at 200 MHz transition frequency. The 100 nA collector cutoff keeps leakage negligible at high temperature, which matters when the transistor shares a PCB with a hot voltage regulator.
Yes, it is qualified to AEC-Q101, the automotive reliability standard, and is part of Infineon's Automotive series.