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Infineon Technologies BCR162E6327 — Discrete Semiconductors

Infineon BCR162E6327 PNP Pre-Biased Transistor, AEC-Q101

MPNBCR162E6327
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Infineon BCR162E6327 PNP pre-biased transistor, Automotive AEC-Q101, 50 V VCEO, 100 mA IC, 200 mW, SOT-23-3 package.

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Specifications

BCR162E6327 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce20 @ 5mA, 5V
Power - max200 mW
Frequency200 MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased PNP for automotive and industrial loads

The Infineon BCR162E6327 is a PNP pre-biased transistor in a SOT-23-3 package, qualified to AEC-Q101 for automotive applications. The 50 V collector-emitter breakdown and 100 mA continuous collector current cover typical low-side switching jobs: relay coils, indicator LEDs, solenoid pre-drivers in engine-control or body-electronics modules.

The 200 mW power dissipation limit in the SOT-23-3 footprint means you need to check the load duty cycle. At 100 mA and a 300 mV Vce(sat) the on-state dissipation is 30 mW, leaving plenty of headroom for switching losses at 200 MHz transition frequency. The 100 nA collector cutoff keeps leakage negligible at high temperature, which matters when the transistor shares a PCB with a hot voltage regulator.

Frequently asked questions

Is BCR162E6327 suitable for automotive applications?

Yes, it is qualified to AEC-Q101, the automotive reliability standard, and is part of Infineon's Automotive series.