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Infineon Technologies BCR158WH6327XTSA1 — Discrete Semiconductors

Infineon BCR158WH6327XTSA1 PNP Pre-Biased Transistor, 100 mA

MPNBCR158WH6327XTSA1
NRND

Infineon BCR158WH6327XTSA1, PNP pre-biased transistor, 100 mA collector current, 50 V Vce, integrated bias resistors R1=2.2 kOhms, R2=47 kOhms, 200 MHz transition frequency, SC-70 / SOT-323 package, surface mount.

$0.0506Ref. price · indicative, final on quote
Infineon Technologies BCR158WH6327XTSA1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR158WH6327XTSA1 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency - transition200 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

PNP pre-biased transistor with integrated resistors

The Infineon BCR158WH6327XTSA1 is a PNP pre-biased digital transistor that integrates the bias resistor network (R1 = 2.2 kOhms, R2 = 47 kOhms) so you can drop two external resistors from the BOM. The SC-70 / SOT-323 package keeps the footprint small.

100 mA collector current, 50 V breakdown — sizing the load

The collector current rating of 100 mA and collector-emitter breakdown voltage of 50 V set the load envelope. The 250 mW power dissipation limit means the total voltage-current product across the transistor must stay under that ceiling.

Frequently asked questions

Is BCR158WH6327XTSA1 obsolete?

Existing production BOMs can still be fulfilled.