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Infineon Technologies BCR158WE6327HTSA1 — Discrete Semiconductors
Infineon Technologies

BCR158WE6327HTSA1 PNP Pre-Biased Transistor, 50 V, 100 mA

MPNBCR158WE6327HTSA1
Obsolete

Infineon BCR158WE6327HTSA1, PNP pre-biased transistor, 50 V Vce, 100 mA Ic, 200 MHz ft, R1 2.2 kOhms, R2 47 kOhms, SC-70 SOT-323, surface mount, 250 mW.

BCR158WE6327HTSA1 datasheet
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Specifications

BCR158WE6327HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency200 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

What this PNP pre-biased transistor does

The Infineon BCR158WE6327HTSA1 is a PNP pre-biased transistor in a SC-70 SOT-323 surface-mount package. It integrates a 2.2 kOhm base resistor (R1) and a 47 kOhm emitter-base resistor (R2), which simplifies board layout by reducing external component count. With a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA, it suits low-power switching and interface circuits in industrial control, consumer electronics, and general-purpose load driving. The 200 MHz transition frequency supports moderate-speed switching applications.

This part carries an obsolete product status.

The 50 V collector-emitter breakdown sets the maximum rail voltage this transistor can handle — stay below that for reliable switching. The 100 mA continuous collector current defines the load it can drive; for inductive loads or higher inrush, derate accordingly. The 250 mW power dissipation limit is the package ceiling at 25 °C ambient; in a dense SMT layout or elevated temperature, the usable current drops. The 70 minimum hFE at 5 mA, 5 V ensures adequate gain for base-drive calculations in saturated switching.

Frequently asked questions

What are the specs of BCR158WE6327HTSA1?

It is a PNP pre-biased transistor with 50 V Vce breakdown, 100 mA Ic max, 200 MHz transition frequency, 250 mW power dissipation, and a 70 minimum hFE at 5 mA, 5 V. It comes in an SC-70 SOT-323 surface-mount package.