PNP pre-biased transistor with integrated bias resistors
It integrates a 2.2 kOhm base resistor (R1) and a 47 kOhm emitter-base resistor (R2), eliminating two external passives from the BOM. Transition frequency is 200 MHz.
It is rated for the under-hood and chassis-domain temperature profiles typical of automotive electronics.
50 V Vce and 100 mA Ic — application fit
The pre-biased resistors set a fixed base current, so the transistor saturates with a known drive — useful for switching loads where you want a predictable Vce(sat) of 300 mV at 10 mA collector current with 500 µA base drive.
