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Infineon Technologies BCR158 — Discrete Semiconductors
Infineon Technologies

Infineon BCR158 PNP Pre-Biased Transistor, 50 V, 100 mA

MPNBCR158
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Infineon BCR158 PNP pre-biased digital transistor, 50 V VCEO, 100 mA Ic, 2.2 kΩ base resistor (R1), 47 kΩ base-emitter resistor (R2), 200 MHz transition frequency, SC-70 SOT-323 package, surface mount.

BCR158 datasheet
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Specifications

BCR158 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency200 MHz
PackageBulk
CaseSC-70, SOT-323
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

PNP pre-biased digital transistor — 50 V, 100 mA, integrated bias resistors

The Infineon BCR158 is a PNP pre-biased digital transistor (sometimes called a resistor-equipped transistor or RET) in a SC-70 (SOT-323) surface-mount package. It integrates a 2.2 kΩ base resistor (R1) and a 47 kΩ base-emitter resistor (R2), which eliminates the need for external bias components in low-current switching and driver applications. The transistor is rated for a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 100 mA.

Low Vce(sat) — 300 mV at 10 mA

The BCR158 specifies a maximum Vce(sat) of 300 mV at a base current of 500 µA and a collector current of 10 mA. This low saturation voltage keeps conduction losses minimal when driving loads such as relays, LEDs, or logic inputs from a microcontroller GPIO. The DC current gain (hFE) is a minimum of 70 at 5 mA collector current and 5 V Vce, which provides consistent drive strength across production lots.

For procurement, this translates to standard lead times through the distribution channel and no urgency to qualify a substitute.

Frequently asked questions

What is the equivalent of BCR158?

There is no single pin-compatible equivalent listed in the official cross-reference for the BCR158. Many PNP pre-biased transistors in the same SC-70 footprint use different internal resistor values. The closest functional match within the Infineon BCR series would share the same R1/R2 ratio (2.2 kΩ / 47 kΩ) and package, but no specific alternate order code is recorded. For a drop-in replacement, verify the resistor divider ratio and pinout from the respective datasheet.

What is BCR158's listed power dissipation?

The maximum power dissipation for the BCR158 is 250 mW. This limits the continuous collector current and ambient temperature combination; for reliable operation, derate according to the thermal resistance of the SC-70 package in the target PCB layout.