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Infineon Technologies BCR148SE6327BTSA1 — Discrete Semiconductors

Infineon BCR148SE6327BTSA1 Dual NPN Pre-Biased Transistor

MPNBCR148SE6327BTSA1
Obsolete

Infineon BCR148SE6327BTSA1 dual NPN pre-biased transistor, 50V VCEO, 100mA IC, 250mW, 100MHz transition frequency, SOT-363 package, Tape & Reel.

$0.4100Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR148SE6327BTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250mW
Frequency100MHz
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)47kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

The Infineon BCR148SE6327BTSA1 is a dual NPN pre-biased transistor array in a 6-VSSOP, SC-88, SOT-363 surface-mount package. Each transistor integrates two 47kΩ resistors — one in series with the base (R1) and one from base to emitter (R2) — eliminating the need for external bias resistors in low-current switching applications. With a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, it is suited for driving small relays, LEDs, or logic-level loads from a microcontroller output without additional components. The 100MHz transition frequency supports switching up to moderate-speed digital signals.

Obsolete — sourcing through independent distribution

The BCR148SE6327BTSA1 carries an obsolete lifecycle status.

Key ratings for the BOM decision

The 50V collector-emitter breakdown voltage sets the maximum rail voltage for the switching load — adequate for 24V industrial logic or 12V automotive auxiliary circuits. The 100mA collector current limit per transistor means each output drives a load drawing up to 100mA; for higher current, parallel the two NPN stages or select a higher-rated device. The 250mW total power dissipation (package limit) governs thermal derating: at 85°C ambient, derate to roughly 160mW. The 47kΩ base resistor (R1) and 47kΩ base-emitter resistor (R2) provide a fixed bias that turns the transistor fully on with a 3.3V or 5V logic-level input, simplifying the drive interface.

Frequently asked questions

What is the replacement for BCR148SE6327BTSA1?

For a pin-compatible alternative, evaluate other dual NPN pre-biased transistor arrays in the SOT-363 package from Infineon or second-source manufacturers, verifying the resistor values (R1 = 47kΩ, R2 = 47kΩ) and 50V VCEO rating.