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Infineon Technologies BCR148E6327HTSA1 — Discrete Semiconductors

BCR148E6327HTSA1 NPN Pre-Biased Transistor, 50V 100mA SOT-23

MPNBCR148E6327HTSA1
Last Buy

Infineon BCR148E6327HTSA1 NPN pre-biased transistor, 50 V Vce, 100 mA Ic, 100 MHz ft, 47 kΩ R1/R2, SOT-23-3 package, surface mount.

$0.3700Ref. price · indicative, final on quote
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Specifications

BCR148E6327HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max200 mW
Frequency100 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)47 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

What this pre-biased NPN does on your board

The Infineon BCR148E6327HTSA1 is an NPN pre-biased transistor — a switching transistor with two 47 kΩ resistors integrated into the SOT-23 package. The base resistor (R1) and the base-emitter resistor (R2) are both 47 kΩ, eliminating the need for external bias components. This saves board space and reduces BOM count in low-current switching applications where the transistor is driven directly from a logic output or microcontroller GPIO.

Collector current is rated 100 mA maximum, and collector-emitter breakdown voltage is 50 V — suitable for driving relays, small solenoids, indicator LEDs, or level-shifting logic signals in 5 V and 12 V systems. The 100 MHz transition frequency is adequate for switching up to low-MHz PWM rates. Saturation voltage is 300 mV at 500 µA base drive and 10 mA collector current, which keeps conduction losses low in the on-state. The built-in 47 kΩ resistors set a fixed base current when driven from a known voltage. At 5 V logic, base current is roughly (5 V - 0.7 V) / 47 kΩ ≈ 91 µA, which with a minimum DC current gain of 70 at 5 mA gives ample drive for loads up to about 6 mA. For higher collector currents up to 100 mA, the base drive from the same resistor limits the available gain margin — the part is best suited for loads where the collector current stays under 30-50 mA in practice.

Last-buy status — what it means for procurement

The BCR148E6327HTSA1 carries a Last Buy lifecycle status. Infineon has scheduled this part for discontinuation, meaning the final production window is closing. Buyers should secure remaining inventory through independent distribution channels.

Frequently asked questions

What are the R1 and R2 resistor values in BCR148E6327HTSA1?

Both the base resistor (R1) and the base-emitter resistor (R2) are 47 kΩ. This fixed ratio determines the base drive when the transistor is switched on from a logic-level voltage.

Can I use BCR148E6327HTSA1 for a 100 mA collector load?

The absolute maximum collector current is 100 mA, but the built-in 47 kΩ base resistor limits base drive to roughly 90-100 µA from a 5 V source. With a minimum DC current gain of 70 at 5 mA, the practical continuous collector current is lower — typically 30-50 mA — before the transistor leaves saturation. For switching 100 mA loads, consider a pre-biased transistor with a lower-value base resistor or a standard transistor with external bias.

What is the replacement or equivalent for BCR148E6327HTSA1?

The BCR148 base product number covers a family of pre-biased transistors with different resistor values. A pin-compatible substitute would need to match the SOT-23 package and the 47 kΩ / 47 kΩ resistor pair — check other BCR148 variants or equivalent pre-biased NPN transistors from Infineon's portfolio. Qualification of any substitute is the buyer's responsibility.