BCR146E6327HTSA1

Infineon Technologies

Infineon BCR146E6327HTSA1 NPN Pre-Biased Transistor, 50 V, 70 mA, 150 MHz, R1=47k, R2=22k, PG-SOT23, Surface Mount.

Infineon Technologies BCR146E6327HTSA1
[IN STOCK] In Stock: 2 pcs
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MOQ 2 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BCR146E6327HTSA1 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)70 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce50 @ 5mA, 5V
Power - max200 mW
Frequency - transition150 MHz
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)47 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Technical details

Pre-biased NPN — what the built-in resistors buy you

It integrates two bias resistors — 47 kΩ base (R1) and 22 kΩ emitter-base (R2) — so a single GPIO pin can drive the base directly without external resistors. Collector current is rated 70 mA max, Vce breakdown at 50 V, and transition frequency hits 150 MHz, making it a fit for low-power switching and interface buffering in industrial and consumer boards.

Last Buy — plan the BOM now

Infineon has placed the BCR146E6327HTSA1 in Last Buy status. That means a final order window is open — once it closes, the part will no longer be manufactured. If this transistor is on your BOM, secure inventory or qualify a replacement before the LTB deadline passes.

Switching and saturation — what the numbers mean

Vce saturation is 300 mV at 500 µA base drive and 10 mA collector current — typical for a small-signal pre-biased transistor. DC current gain (hFE) minimum is 50 at 5 mA, 5 V. The 100 nA collector cutoff (ICBO) keeps leakage negligible in off-state. With a 200 mW power limit and SOT-23 footprint, thermal derating matters above a few tens of mA continuous; the part is sized for low-duty-cycle or lightly loaded outputs.

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