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Infineon Technologies BCR142B6327HTLA1 — Discrete Semiconductors

Infineon BCR142B6327HTLA1 NPN Pre-Biased Transistor, 50 V

MPNBCR142B6327HTLA1
Obsolete

Infineon BCR142B6327HTLA1 NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 150 MHz transition frequency, built-in 22 kΩ base and 47 kΩ emitter-base resistors, PG-SOT23 package, Tape & Reel.

$4.1600Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR142B6327HTLA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max200 mW
Frequency150 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)22 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN — what the built-in resistors buy you

The Infineon BCR142B6327HTLA1 is an NPN pre-biased transistor in a PG-SOT23 package. It integrates a 22 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), eliminating two external passives from the board — a space and placement-cost win for high-volume switching loads like relay drivers, LED indicators, and logic-level interface circuits. Collector-emitter breakdown is rated at 50 V, with a maximum collector current of 100 mA and a transition frequency of 150 MHz — adequate for low-frequency switching up to a few hundred kilohertz. Saturation voltage is 300 mV at 500 µA base drive and 10 mA collector current, keeping conduction losses modest in saturated switching. DC current gain minimum is 70 at 5 mA, 5 V, and collector cutoff current is just 100 nA, so off-state leakage won't load a CMOS output or pull down a bias rail.

Infineon lists the BCR142B6327HTLA1 as Obsolete. No last-time-buy window remains open through the factory channel. Because the pre-biased resistor network is the distinguishing feature, a direct replacement must match the 22 kΩ / 47 kΩ divider ratio and the PG-SOT23 footprint. The BCR142 family shares the same base part number; other suffix variants may carry different resistor values or package options — verify the full order code before substituting.

Frequently asked questions

What is the replacement for BCR142B6327HTLA1?

Infineon does not list a direct successor for the BCR142B6327HTLA1. Any replacement must match the pre-biased resistor values (22 kΩ base, 47 kΩ emitter-base), the NPN polarity, and the PG-SOT23 package. Check the BCR142 family for other suffix variants, but verify the resistor divider and footprint before substituting.

What are the specifications of BCR142B6327HTLA1?

It is an NPN pre-biased transistor with 50 V collector-emitter breakdown, 100 mA maximum collector current, 150 MHz transition frequency, built-in 22 kΩ base resistor and 47 kΩ emitter-base resistor, PG-SOT23 package, 200 mW maximum power dissipation, and a minimum DC current gain of 70 at 5 mA, 5 V.