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Infineon Technologies BCR141WE6327HTSA1 — Discrete Semiconductors

Infineon BCR141WE6327HTSA1 NPN Pre-Biased Transistor, 50 V

MPNBCR141WE6327HTSA1
Obsolete

Infineon BCR141WE6327HTSA1 NPN pre-biased transistor, 50 V VCEO, 100 mA IC, 250 mW, SC-70/SOT-323, surface mount.

$0.2400Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

BCR141WE6327HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce50 @ 5mA, 5V
Power - max250 mW
Frequency130 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)22 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

The Infineon BCR141WE6327HTSA1 is an NPN pre-biased transistor in a surface-mount SC-70 (SOT-323) package. It integrates two 22 kOhm resistors — one in series with the base, one between base and emitter — eliminating the need for external bias components in switching and driver applications.

The 100 mA maximum collector current (Ic) and 50 V collector-emitter breakdown voltage define the load envelope — this transistor handles small relays, LEDs, and logic-level loads, not power switching. The 250 mW power dissipation limit in the SOT-323 package means derating is necessary above room temperature; at 85 °C ambient, the available power drops to roughly half. The 130 MHz transition frequency is adequate for switching up to low-MHz rates, typical for GPIO-driven loads rather than high-speed PWM. The pre-biased configuration with two 22 kOhm resistors simplifies the BOM by removing two discrete resistors per transistor. The 300 mV saturation voltage at 500 µA base current and 10 mA collector current ensures low on-state losses for lightly loaded outputs.

Obsolete — sourcing reality for sustainment programs

Infineon has marked the BCR141WE6327HTSA1 as Obsolete. For sustainment of existing designs, procurement must rely on the independent distribution channel — new-old-stock and surplus inventory.

Frequently asked questions

Where can I buy BCR141WE6327HTSA1 and how do I get a price?

Submit an RFQ through this listing; we confirm availability and current pricing at quote time. No stock or price figures are published here because supply varies.

What is the replacement for BCR141WE6327HTSA1?

Infineon has not published a direct successor for this specific order code. For new designs, look at current-production pre-biased NPN transistors in SOT-323 from Infineon or other manufacturers. For existing BOMs, the independent channel is the primary source.

What is the maximum collector current of BCR141?

The BCR141WE6327HTSA1 has a maximum collector current (Ic) rating of 100 mA.

What is the difference between BCR141 and BCR142?

The BCR141 and BCR142 are both pre-biased NPN transistors in SOT-323, but they differ in the integrated resistor values. The BCR141 uses 22 kOhm resistors for both R1 (base) and R2 (base-emitter), while the BCR142 uses different resistor values. Check the respective datasheets for the exact BCR142 resistor configuration.