Skip to main content
Log in
Infineon Technologies BCR141E6433HTMA1 — Discrete Semiconductors

BCR141E6433HTMA1 NPN Pre-Biased Transistor, 50 V, 100 mA

MPNBCR141E6433HTMA1
NRND

Infineon BCR141E6433HTMA1 NPN pre-biased transistor, 50 V Vce, 100 mA Ic, 130 MHz ft, built-in 22 kOhm base and emitter-base resistors, PG-SOT23 package, 250 mW power dissipation.

$0.0431Ref. price · indicative, final on quote
Infineon Technologies BCR141E6433HTMA1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR141E6433HTMA1 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce50 @ 5mA, 5V
Power - max250 mW
Frequency - transition130 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)22 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

NPN pre-biased transistor with integrated bias network

It integrates two 22 kOhm resistors — one in series with the base (R1) and one between base and emitter (R2) — which eliminates the need for external bias components in low-current switching and driver applications. Collector-emitter breakdown voltage is rated at 50 V, maximum collector current at 100 mA, and the device dissipates up to 250 mW. Transition frequency is 130 MHz, making it suitable for switching up to low-MHz rates. The built-in resistor network simplifies PCB layout and reduces BOM count in digital output stages, relay drivers, and logic-level interface circuits.

NRND — last-time-buy window is open

For new designs, Infineon recommends evaluating current-production pre-biased transistor families. For existing BOMs, independent distribution can source remaining stock.

Vce saturation is specified at 300 mV maximum with a base current of 500 µA and collector current of 10 mA. That low saturation voltage keeps power dissipation low in the on-state. The 100 nA maximum collector cutoff current (ICBO) ensures negligible leakage in off-state at high temperature, important for battery-powered or high-impedance nodes.

Frequently asked questions

Is BCR141E6433HTMA1 obsolete?

It is not yet obsolete, but it is on a last-time-buy trajectory. Existing production can still be supported through independent channels.

What is a direct replacement for BCR141E6433HTMA1?

No official direct replacement is listed by Infineon. For new designs, Infineon recommends evaluating current-production pre-biased NPN transistor families in the same SOT-23 footprint. For existing BOMs, the closest functional match would be another NPN pre-biased transistor with 22 kOhm base and emitter-base resistors in a SOT-23 package, but pin compatibility must be verified per the specific manufacturer's datasheet.