NPN pre-biased transistor with integrated bias network
The Infineon BCR141E6433HTMA1 is an NPN pre-biased transistor in a PG-SOT23 surface-mount package. It integrates two 22 kOhm resistors — one in series with the base (R1) and one between base and emitter (R2) — which eliminates the need for external bias components in low-current switching and driver applications. Collector-emitter breakdown voltage is rated at 50 V, maximum collector current at 100 mA, and the device dissipates up to 250 mW. Transition frequency is 130 MHz, making it suitable for switching up to low-MHz rates. The built-in resistor network simplifies PCB layout and reduces BOM count in digital output stages, relay drivers, and logic-level interface circuits.
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This means the part is still available for existing production but is on a path toward end-of-life. For new designs, Infineon recommends evaluating current-production pre-biased transistor families. For existing BOMs, independent distribution can source remaining stock.
Vce saturation is specified at 300 mV maximum with a base current of 500 µA and collector current of 10 mA. That low saturation voltage keeps power dissipation low in the on-state. DC current gain (hFE) is a minimum of 50 at 5 mA collector current and 5 V Vce, which is typical for a pre-biased transistor and sufficient to guarantee a defined on-state with the internal 22 kOhm base resistor. The 100 nA maximum collector cutoff current (ICBO) ensures negligible leakage in off-state at high temperature, important for battery-powered or high-impedance nodes.