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Infineon Technologies BCR135WH6327XTSA1 — Discrete Semiconductors
Infineon Technologies

Infineon BCR135WH6327XTSA1 NPN Pre-Biased Transistor

MPNBCR135WH6327XTSA1
Last Buy

Infineon BCR135WH6327XTSA1 NPN pre-biased transistor, SC-70/SOT-323 package, 50 V VCEO, 100 mA Ic, 150 MHz fT, with integrated 10 kOhm base and 47 kOhm emitter-base resistors.

$0.0501Ref. price · indicative, final on quote
BCR135WH6327XTSA1 datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR135WH6327XTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency150 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN in a small SOT-323 package

The Infineon BCR135WH6327XTSA1 is an NPN pre-biased transistor in the SC-70 (SOT-323) surface-mount package, integrating a 10 kOhm base resistor and a 47 kOhm emitter-base resistor. This built-in bias network reduces external component count in switching and interface applications where a single transistor with known turn-on characteristics is needed.

Last Buy — plan the BOM transition

Infineon has placed the BCR135WH6327XTSA1 into Last Buy status. This means the factory has a final order window; after that date, new-issue supply will come only from the independent surplus and broker channel. For a production BOM that depends on this exact order code, the sourcing strategy needs to secure the last-time-buy quantity or qualify a replacement before the window closes.

Ratings that matter for the design

The 50 V collector-emitter breakdown voltage and 100 mA maximum collector current cover low-side switching, level shifting, and signal gating in 3.3 V to 24 V logic and industrial control circuits. The 150 MHz transition frequency means it switches cleanly at moderate speeds — suitable for GPIO-driven loads and low-frequency PWM, not for RF output stages. The 250 mW power dissipation limit in the SOT-323 package is the thermal ceiling: at 5 V and 10 mA the junction stays well within the safe area, but driving a 100 mA load near the Vce saturation voltage of 300 mV at 500 µA base current needs a check against the derating curve.

Frequently asked questions

Is BCR135WH6327XTSA1 obsolete?

Infineon has designated the BCR135WH6327XTSA1 as Last Buy, which is the final phase before discontinuation. It is not yet obsolete, but the last-time-buy window is open. Sourcing beyond that point will rely on the independent surplus channel.

What is the replacement for BCR135WH6327XTSA1?

The base product number is BCR135, and a pin-compatible replacement within the same family would need to match the SOT-323 footprint and the integrated 10 kOhm / 47 kOhm resistor divider. Without a published cross-reference from Infineon, qualifying a substitute requires comparing the bias resistor values and package dimensions against other pre-biased NPN transistors in SOT-323.

What are the specifications of BCR135WH6327XTSA1?

It is an NPN pre-biased transistor with integrated 10 kOhm base and 47 kOhm emitter-base resistors. Key ratings: 50 V VCEO, 100 mA Ic, 150 MHz fT, 250 mW power dissipation, 300 mV Vce saturation at 500 µA base current and 10 mA collector current, and a minimum DC current gain of 70 at 5 mA and 5 V. It comes in an SC-70 (SOT-323) surface-mount package.