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Infineon Technologies BCR135SH6327XTSA1 — Discrete Semiconductors

BCR135SH6327XTSA1 dual NPN pre-biased transistor, 50 V

MPNBCR135SH6327XTSA1
Last Buy

Infineon BCR135SH6327XTSA1 dual NPN pre-biased transistor, 50 V VCEO, 100 mA IC, 150 MHz fT, 10 kΩ base resistor, 47 kΩ base-emitter resistor, SOT-363 package, 250 mW power dissipation.

$0.4400Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR135SH6327XTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250mW
Frequency150MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Dual pre-biased NPN in a small SOT-363

The Infineon BCR135SH6327XTSA1 integrates two NPN pre-biased transistors in a single SOT-363 package. Each transistor includes a 10 kΩ series base resistor and a 47 kΩ resistor between base and emitter, which eliminates the need for external bias resistors in switching and driver applications. The part is rated for a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA per transistor, with a transition frequency of 150 MHz.

Last Buy – what it means for procurement

Infineon has placed the BCR135SH6327XTSA1 in Last Buy status. For existing BOM lines, we can source remaining stock and quote against an RFQ with confirmed availability at the time of order.

Package and mounting

Housed in the 6-pin SOT-363 package (also known as 6-VSSOP, SC-88, or PG-SOT363-PO), this is a surface-mount device. The small footprint suits space-constrained boards in consumer, industrial, or telecom equipment. The 250 mW total power dissipation limit applies to the whole package, so derate if both transistors are conducting simultaneously.

Frequently asked questions

What is the replacement for BCR135SH6327XTSA1?

Infineon has not published a direct successor for the BCR135SH6327XTSA1. A functionally similar dual pre-biased NPN transistor in SOT-363 from another manufacturer may serve as a cross, but pin compatibility and bias resistor values (10 kΩ base, 47 kΩ base-emitter) must be verified against the original.