Dual NPN pre-biased transistor — 50 V, 100 mA, 150 MHz
The Infineon BCR135SE6327BTSA1 is a dual NPN pre-biased transistor array in a PG-SOT363-PO surface-mount package. Each transistor integrates two bias resistors — a 10kΩ base resistor (R1) and a 47kΩ base-emitter resistor (R2) — eliminating the need for external biasing components in switching and driver applications. The device is rated for a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, with a transition frequency of 150 MHz.
Obsolete — sourcing through independent distribution
This part carries an Obsolete lifecycle status from Infineon.
The 50 V Vce(max) and 100 mA Ic(max) define the safe operating area for driving relays, solenoids, small motors, or logic-level loads. The 150 MHz transition frequency is adequate for switching up to several MHz, but the pre-biased topology limits base-drive flexibility — the 10kΩ / 47kΩ divider sets a fixed turn-on threshold of roughly 2.5 V at the base input. The 250 mW power dissipation ceiling means derating is needed above 25°C ambient; in a 85°C environment the usable power drops to about 150 mW.