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Infineon Technologies BCR133WH6327XTSA1 — Discrete Semiconductors

Infineon BCR133WH6327XTSA1 NPN Pre-Biased Transistor

MPNBCR133WH6327XTSA1
Last Buy

Infineon BCR133WH6327XTSA1 NPN pre-biased transistor, 50V VCEO, 100mA IC, 10 kOhms + 10 kOhms built-in resistors, 130 MHz fT, 250 mW, SC-70/SOT-323 package, Tape & Reel.

$0.0501Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR133WH6327XTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250 mW
Frequency130 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

What this pre-biased NPN does on the board

The Infineon BCR133WH6327XTSA1 is an NPN pre-biased transistor in a SC-70 / SOT-323 surface-mount package. It integrates two 10 kOhm resistors — one in series with the base (R1), one between base and emitter (R2) — so you get a complete switching stage without external bias parts. Collector-emitter breakdown is rated 50 V, continuous collector current 100 mA, and the transition frequency hits 130 MHz. Power dissipation tops out at 250 mW in the small SOT-323 body, which sets the thermal budget for any continuous-load design.

Infineon has moved the BCR133WH6327XTSA1 to Last Buy status. That means the factory window for placing final orders is already open or closing; after that date no more units ship from Infineon. Any remaining production or buffer stock moves through independent distribution. If your BOM still calls out this exact suffix, now is the time to secure lifetime-buy quantities or qualify a drop-in replacement.

250 mW in SOT-323 — where the thermal constraint bites

A 250 mW ceiling in a SOT-323 package means the part is sized for low-power switching, not continuous linear operation. At 100 mA collector current and a VCE of a couple volts you are already near the thermal limit; derating is required above 25°C ambient. For a relay driver, LED switch, or logic-level interface where the transistor spends most of its time saturated (Vce(sat) is 300 mV at 10 mA), the dissipation stays well inside the envelope — but any application that holds the device in the linear region needs a junction-temperature check against the 250 mW max.

Frequently asked questions

Is BCR133WH6327XTSA1 obsolete?

Yes — Infineon lists it as Last Buy, meaning the end of production is scheduled and the factory order window is active or closed. The part is not in ongoing volume manufacture.

What is the replacement for BCR133WH6327XTSA1?

No official successor order code appears in the available records. A functionally equivalent pre-biased NPN with the same 10 kOhm + 10 kOhm resistor pair and SOT-323 package from the same base product family (BCR133 base number) is the closest starting point, but pin compatibility and electrical ratings must be verified against the specific BOM requirements.

What is the difference between BCR133W and BCR135?

The BCR133W integrates 10 kOhm base and 10 kOhm base-emitter resistors; the BCR135 uses a different resistor ratio (10 kOhm base, 47 kOhm base-emitter per the Infineon BCR135 datasheet). The different divider ratio changes the input threshold and on/off behavior — they are not drop-in equivalents without checking the drive conditions.