Infineon BCR133WH6327 NPN Pre-Biased Transistor, 100 mA Ic, 50 V Vce, 10 kΩ R1/R2, 130 MHz ft, SC-70 (SOT-323), Surface Mount, 250 mW.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 30 @ 5mA, 5V |
| Power - max | 250 mW |
| Frequency - transition | 130 MHz |
| Package | Bulk |
| Case | SC-70, SOT-323 |
| Resistor - base (R1) | 10 kOhms |
| Resistor - emitter base (R2) | 10 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 500µA, 10mA |
The Infineon BCR133WH6327 is an NPN pre-biased transistor — it integrates both a 10 kΩ base resistor (R1) and a 10 kΩ emitter-base resistor (R2) inside the same SC-70 (SOT-323) package. That means two external resistors disappear from the BOM and the board. The 250 mW power dissipation limit suits low-power switching applications like relay drivers, LED indicators, and logic-level interfacing in compact consumer or industrial PCBs.
The integrated base resistor (R1) is 10 kΩ, and the emitter-base resistor (R2) is also 10 kΩ. This pre-biased configuration eliminates two external components.
The maximum collector current (Ic) is 100 mA. This sets the upper load limit for switching applications such as driving small relays, LEDs, or logic inputs.
Pin-compatible alternatives include other Infineon pre-biased NPN transistors in the same SC-70 package with different resistor ratios — for example, the BCR133WH6327 uses 10 kΩ / 10 kΩ; a sibling with 10 kΩ / 47 kΩ (BCR135WH6327) or 2.2 kΩ / 10 kΩ (BCR108WH6327) shifts the base drive threshold. Check the resistor divider that matches your saturation voltage requirement.