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Infineon Technologies BCR133WE6327HTSA1 — Discrete Semiconductors

BCR133WE6327HTSA1 NPN Pre-Biased Transistor, 100 mA, SC-70

MPNBCR133WE6327HTSA1
Obsolete

Infineon BCR133WE6327HTSA1 NPN pre-biased transistor, 100 mA collector current, 50 V Vce, 10 kOhm base and emitter-base resistors, 130 MHz transition frequency, SC-70/SOT-323 package, surface mount.

$0.1900Ref. price · indicative, final on quote
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Specifications

BCR133WE6327HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250 mW
Frequency130 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN in a small SC-70 package

The Infineon BCR133WE6327HTSA1 is an NPN pre-biased transistor — a digital transistor — that integrates the bias network directly into the package. It includes a 10 kOhm base resistor (R1) and a 10 kOhm emitter-base resistor (R2), eliminating the need for two external resistors on the board. Rated for a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V, it handles typical low-current switching and interface duties in consumer and industrial control circuits. The SC-70 (SOT-323) package suits space-constrained, surface-mount designs.

Obsolete — sourcing from the spot market

This part carries an Obsolete lifecycle status. Infineon has ended production, so the only available stock is surplus or excess inventory held by independent distributors. If you need a drop-in replacement, look for other NPN pre-biased transistors in the SC-70 package with the same 10 kOhm / 10 kOhm resistor configuration — the BCR133 family shares the same base number, but each suffix variant may differ in package or resistor values.

130 MHz transition frequency and saturation characteristics

With a transition frequency of 130 MHz, this transistor can handle switching applications up to the low-MHz range, suitable for relay drivers, LED switching, and level translation. The Vce saturation voltage is specified at 300 mV maximum at 500 µA base current and 10 mA collector current — a low enough drop to keep power dissipation manageable. The 250 mW maximum power rating in the SC-70 package means derating is needed for continuous operation near the current limit.

Frequently asked questions

Is BCR133WE6327HTSA1 obsolete?

Yes, the BCR133WE6327HTSA1 is listed as Obsolete. Infineon has discontinued production.

What is the replacement for BCR133WE6327HTSA1?

A functional replacement would be another NPN pre-biased transistor in an SC-70 package with 10 kOhm base and 10 kOhm emitter-base resistors. The BCR133 base product number shares the same resistor values, but verify the package suffix matches your footprint.

What is the maximum collector current of BCR133WE6327HTSA1?

The maximum collector current (Ic) is 100 mA.