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Infineon Technologies BCR133SH6433XTMA1 — Discrete Semiconductors

BCR133SH6433XTMA1 Dual NPN Pre-Biased Transistor, 50V, 100mA

MPNBCR133SH6433XTMA1
Obsolete

Infineon BCR133SH6433XTMA1, dual NPN pre-biased transistor, 50V Vce, 100mA Ic, 250mW, 130MHz, 10kΩ base/emitter resistors, PG-SOT363-PO package, Tape & Reel.

$0.2800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR133SH6433XTMA1 specifications
ParameterValue
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250mW
Frequency - transition130MHz
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)10kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

The Infineon BCR133SH6433XTMA1 integrates two NPN transistors with 10kΩ series base resistors and 10kΩ emitter-base resistors in a single SOT-363 package. This pre-biased configuration eliminates two external resistors per channel, saving board space in high-density switching arrays. The 50V collector-emitter breakdown and 100mA continuous collector current suit it for driving relays, LEDs, or logic-level loads from a 3.3V or 5V microcontroller output.

Frequently asked questions

What replaces BCR133SH6433XTMA1?

No official replacement order code is provided by Infineon. A functionally similar dual pre-biased NPN transistor in the same SOT-363 footprint should be evaluated for switching performance, saturation voltage, and thermal characteristics before substitution.