Dual pre-biased NPN array in a SOT-363 footprint
The Infineon BCR133SE6327BTSA1 integrates two matched NPN transistors with 10kΩ bias resistors built into the base and emitter legs of each device. This pre-biased configuration eliminates the need for external resistor pairs in digital switching, level translation, and low-current load driver stages. Each transistor handles up to 100mA collector current and blocks 50V collector-emitter, with a 130MHz transition frequency suitable for switching up to a few megahertz. The part is housed in the PG-SOT363-PO package (6-VSSOP / SC-88 / SOT-363 footprint), a common 6-pin surface-mount outline for dual small-signal transistors.
The 50V VCEO breakdown gives comfortable margin for 24V industrial bus rails and 12V automotive supplies. The 100mA continuous collector rating covers typical I/O loads, relay/solenoid pre-drive, and LED indicator sinking. The 10kΩ base resistor sets the input threshold around 2.5V at 5V logic drive, so a 3.3V or 5V GPIO can switch it directly — no series resistor needed. The emitter-base resistor (also 10kΩ) provides a turn-off path for faster switching and leakage immunity at elevated temperature. Maximum power dissipation is 250mW for the dual package, so for continuous duty at moderate current check the thermal derating.
Obsolete — sourcing strategy for this line item
Infineon has marked the BCR133SE6327BTSA1 as Obsolete. This means the manufacturer no longer produces the part and no last-time-buy window is open. For a BOM line that calls this exact order code, procurement moves to the independent distribution channel. Stock that exists in the global surplus pipeline carries date codes from the final production runs. When sourcing, confirm the date code range and that the parts have been stored properly (MSL 1, no moisture sensitivity concern for this package, but verify seal condition).