Infineon BCR133E6393HTSA1 NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 10 kOhm base and emitter-base resistors, 130 MHz transition frequency, in SOT-23-3 package.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 30 @ 5mA, 5V |
| Power - max | 200 mW |
| Frequency - transition | 130 MHz |
| Package | Tape & Reel (TR) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Resistor - base (R1) | 10 kOhms |
| Resistor - emitter base (R2) | 10 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 500µA, 10mA |
That means a single SOT-23-3 part replaces the discrete transistor plus two external resistors, cutting placement cost and board area in low-current switching or driver stages where you need a controlled on/off threshold.
If this transistor is on your BOM, now is the time to secure lifetime buy quantities or qualify a drop-in alternative before the window closes.
Yes, BCR133E6393HTSA1 is in Last Buy phase. Infineon has marked it for discontinuation, so final procurement should be arranged promptly.
Both the base resistor (R1) and the emitter-base resistor (R2) are 10 kOhms each, giving a predictable input threshold and turn-off behavior without external components.
For a cross-reference, compare other NPN pre-biased transistors with 10 kOhm R1/R2 in SOT-23-3 — the built-in resistor ratio is the critical parameter for threshold matching. Submit an RFQ for assistance identifying a suitable alternate.