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Infineon Technologies BCR129FE6327 — Discrete Semiconductors

BCR129FE6327 NPN Pre-Biased Transistor, AEC-Q101, 50 V

MPNBCR129FE6327
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Infineon BCR129FE6327 NPN pre-biased transistor, Automotive AEC-Q101 series, 50 V Vce, 100 mA Ic, 200 mW power, 150 MHz transition frequency, surface mount SOT-23-3 package.

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MOQ1 pcs
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Specifications

BCR129FE6327 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max200 mW
Frequency150 MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

AEC-Q101 pre-biased NPN for automotive loads

The Infineon BCR129FE6327 is an NPN pre-biased transistor in the Automotive, AEC-Q101 series, built for automotive-grade switching up to 50 V collector-emitter and 100 mA continuous collector current. The integrated bias resistors (10 kOhms base resistor) reduce external component count on the board. Maximum power dissipation is 200 mW, which sets the thermal budget in compact SOT-23-3 packages — expect derating when ambient exceeds 25 °C in dense modules. Transition frequency of 150 MHz suits low-to-mid speed switching in automotive body controllers, relay drivers, and sensor interface circuits.

Frequently asked questions

Is BCR129FE6327 RoHS compliant?

The BCR129FE6327 is a lead-free device from Infineon's standard RoHS-compliant portfolio, but specific compliance documentation is not in this listing — confirm with the datasheet or your distributor.

What is the difference between BCR129FE6327 and BCR135?

Both are NPN pre-biased transistors in SOT-23 packages, but the BCR129FE6327 is AEC-Q101 automotive qualified, while the BCR135 is a general-purpose commercial part. The BCR129FE6327 also has a 10 kOhm base resistor versus the BCR135's 10 kOhm base resistor and 47 kOhm base-emitter resistor — the bias network differs.