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Infineon Technologies BCR129E6327HTSA1 — Discrete Semiconductors

BCR129E6327HTSA1 NPN Pre-Biased Transistor, 50 V, 100 mA

MPNBCR129E6327HTSA1
Last Buy

Infineon BCR129E6327HTSA1 NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 150 MHz fT, 10 kOhm base resistor, 200 mW max, PG-SOT23 package, Tape & Reel.

$0.0454Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR129E6327HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max200 mW
Frequency150 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

What is the BCR129E6327HTSA1?

The Infineon BCR129E6327HTSA1 is an NPN pre-biased transistor with a 10 kOhm base resistor integrated in a PG-SOT23 surface-mount package. It is designed for switching and driver applications where a single external resistor would otherwise be needed, saving board space and BOM count. Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a transition frequency of 150 MHz.

Last Buy — sourcing timeline is closing

This part carries a Last Buy lifecycle status, meaning Infineon has announced end-of-life and final orders are accepted only for a limited period. Buyers should secure their lifetime buy quantity now or qualify a replacement before supply dries up.

The 200 mW maximum power dissipation sets the thermal ceiling for continuous operation — in a dense SMT board with limited airflow, derate accordingly. The 10 kOhm base resistor biases the transistor on with a typical 5 V logic signal, eliminating the external resistor. VCE(sat) of 300 mV at 500 µA base and 10 mA collector ensures low saturation voltage for efficient switching. DC current gain (hFE) of 120 minimum at 5 mA collector current provides consistent drive strength across temperature.

Frequently asked questions

Is BCR129E6327HTSA1 obsolete?

The BCR129E6327HTSA1 is in Last Buy status — not yet fully discontinued, but Infineon has announced end-of-life and final orders are time-limited. Secure stock now or plan a replacement.

What is the BCR129E6327HTSA1's maximum power dissipation?

200 mW maximum power dissipation, which limits continuous collector current in high-temperature environments. Derate based on ambient temperature and PCB copper area.