Dual pre-biased NPN in a compact SOT-363
The Infineon BCR119SH6433XTMA1 packs two NPN transistors with integrated bias resistors into a single PG-SOT363-PO package, each transistor having a 4.7 kΩ base resistor built in. This eliminates two external resistors per channel and shrinks the footprint for low-power switching, level shifting, or driver stages where board space is tight. Each transistor handles up to 100 mA collector current with a 50 V collector-emitter breakdown, and the 150 MHz transition frequency is adequate for general-purpose switching up to low-MHz rates. The 250 mW total power limit means it's sized for signal-level loads, not output drivers.
NRND — last-time-buy planning needed
Infineon is not actively developing this variant for new production runs, and the supply window is finite. If you're qualifying a new BOM, this part should not be the primary selection. For existing production, secure your last-time-buy quantities early or identify a drop-in alternative before the pipeline dries up.
What the specs mean for your switching design
The 300 mV saturation at 500 µA base / 10 mA collector means the transistor pulls close to ground when fully on, useful for driving a relay coil or LED string with minimal voltage drop. The minimum hFE of 120 at 5 mA, 5 V gives plenty of gain margin for typical microcontroller I/O loads.