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Infineon Technologies BCR119SH6327 — Discrete Semiconductors

BCR119SH6327 AEC-Q101 dual NPN pre-biased transistor

MPNBCR119SH6327
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Infineon BCR119SH6327, Automotive AEC-Q101, 2 NPN - Pre-Biased (Dual), 50V VCEO, 100mA IC, 4.7kΩ R1, 150MHz fT, PG-SOT363-6-1, Surface Mount.

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Specifications

BCR119SH6327 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max250mW
Frequency150MHz
PackageBulk
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)4.7kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

50V, 100mA dual pre-biased NPN — the selection mistake this avoids

The Infineon BCR119SH6327 is an automotive-grade dual NPN transistor with integrated bias resistors, in a 6-VSSOP / SOT-363 package. The R1 base resistor is 4.7kΩ, eliminating two external resistors per channel and saving board space in high-density ECU layouts. Collector-emitter breakdown is rated at 50V with a maximum collector current of 100mA, covering typical low-current solenoid drives, logic-level level shifters, and CAN/LIN bus interface pull-up circuits in 12V and 24V vehicle architectures.

AEC-Q101 — capable is not qualified

An industrial-grade transistor substituted here would need its own PPAP — the OEM auditor will ask for the qualification report, and the BCR119SH6327 has it on file.

Package and mounting

Surface-mount in PG-SOT363-6-1 (SC-88 compatible footprint). The 250mW power dissipation limit means the junction temperature stays within the 150°C absolute-maximum when each channel sinks about 50mA continuously at 50V — derate for ambient above 85°C. The dual NPN shares the same substrate, so thermal coupling between channels is tight; keep the total dissipation under the package ceiling.

Frequently asked questions

Is BCR119SH6327 AEC-Q101 qualified?

Yes, the series is listed as Automotive, AEC-Q101. This is the automotive-grade qualification for discrete semiconductors, covering the stress tests and production change notification required for OEM PPAP acceptance.

What is the R1 value for BCR119SH6327?

The integrated base resistor R1 is 4.7kΩ. This sets the base current for a given input voltage, so the transistor saturates fully with a logic-level drive — check the Vce saturation spec of 300mV at 500µA base, 10mA collector when sizing the input pull-up.