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BCR119SE6433HTMA1

Infineon BCR119SE6433HTMA1 Dual NPN Pre-Biased Transistor

MPNBCR119SE6433HTMA1
Obsolete

Infineon BCR119SE6433HTMA1 dual NPN pre-biased transistor, 50V VCEO, 100mA IC, 150MHz fT, 4.7kΩ base resistor, SOT-363 package, Tape & Reel.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR119SE6433HTMA1 specifications
ParameterValue
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max250mW
Frequency - transition150MHz
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)4.7kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

What this dual pre-biased NPN transistor is

The Infineon BCR119SE6433HTMA1 is a dual NPN pre-biased transistor array in a 6-pin SOT-363 (PG-SOT363-PO) surface-mount package. Each transistor integrates a 4.7kΩ base resistor, eliminating the external bias resistor pair for each channel.

Obsolete — sourcing via independent distribution

Infineon lists this part as Obsolete.

The 50V VCEO and 100mA IC maximums set the operating envelope for low-side switching, relay drivers, or logic-level interface circuits where the base resistor is already on-chip. The 4.7kΩ base resistor is fixed, so the input drive voltage must be chosen to deliver sufficient base current into a 100mV VCE(sat) drop at 10mA load. The 150MHz fT is sufficient for switching up to a few MHz, but the pre-biased architecture limits saturation performance at higher collector currents.

Frequently asked questions

What is the difference between BCR119SE6433HTMA1 and BCR119S?

BCR119S is the base product number for the same dual NPN pre-biased transistor die and package. The suffix E6433HTMA1 designates a specific packing option (Tape & Reel) and factory code — the electrical specifications are identical.

What are the specifications of BCR119SE6433HTMA1?

It is a dual NPN pre-biased transistor with 50V VCEO, 100mA IC max, 150MHz transition frequency, 4.7kΩ base resistor, 300mV VCE(sat) at 500µA base / 10mA collector, and minimum DC current gain of 120 at 5mA, 5V. Packaged in a 6-pin SOT-363 (PG-SOT363-PO).