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Infineon Technologies BCR119SE6327BTSA1 — Discrete Semiconductors

BCR119SE6327BTSA1 Dual NPN Pre-Biased Transistor, 50V 100mA

MPNBCR119SE6327BTSA1
Obsolete

Infineon BCR119SE6327BTSA1, dual NPN pre-biased transistor, 50V VCEO, 100mA IC, 150MHz fT, SOT-363 package.

StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR119SE6327BTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max250mW
Frequency150MHz
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)4.7kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

What this dual NPN pre-biased transistor is

The Infineon BCR119SE6327BTSA1 is a dual NPN pre-biased transistor array in a 6-pin SOT-363 package. Each transistor integrates bias resistors (R1 = 4.7 kΩ) so the base drive network is already on-chip — one less passive per channel on the bill. Collector current is rated 100 mA maximum, with a VCEO breakdown of 50 V and a transition frequency of 150 MHz.

Obsolete — what that means for sourcing

No official successor order code appears on the record.

The 100 mA collector current and 50 V VCEO ceiling suit low-power switching and interface circuits. The 150 MHz transition frequency is adequate for switching up to a few megahertz. Maximum power dissipation is 250 mW.

Frequently asked questions

What is the replacement for BCR119S?

No official replacement order code is listed. For a pin-compatible alternative, check the Infineon pre-biased transistor family in SOT-363 — the BCR119S is a dual NPN with 4.7 kΩ base resistors; a part with the same resistor values and package will drop in without a board change.