Dual pre-biased NPN in a SOT-363
The Infineon BCR119S packs two NPN pre-biased transistors into a single PG-SOT363-6-1 package (6-VSSOP / SC-88 / SOT-363). Each transistor integrates a 4.7 kΩ base resistor (R1), eliminating two external resistors per channel and cutting placement cost on high-density boards. Collector-emitter breakdown is rated at 50 V, collector current at 100 mA maximum, with a transition frequency of 150 MHz — enough for switching loads like relay coils, LED indicators, or level translation up to a few megahertz.
50 V / 100 mA — what it handles
The 50 V Vce(max) and 100 mA Ic(max) define the load envelope. Saturation voltage is 300 mV at 500 µA base drive and 10 mA collector current. DC current gain (hFE) minimum is 120 at 5 mA, 5 V.
Active lifecycle — no LTB worry
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