Dual pre-biased NPN in a SOT-363
The Infineon BCR119S packs two NPN pre-biased transistors into a single PG-SOT363-6-1 package (6-VSSOP / SC-88 / SOT-363). Each transistor integrates a 4.7 kΩ base resistor (R1), eliminating two external resistors per channel and cutting placement cost on high-density boards. Collector-emitter breakdown is rated at 50 V, collector current at 100 mA maximum, with a transition frequency of 150 MHz — enough for switching loads like relay coils, LED indicators, or level translation up to a few megahertz.
50 V / 100 mA — what it handles
The 50 V Vce(max) and 100 mA Ic(max) define the load envelope. DC current gain (hFE) minimum is 120 at 5 mA, 5 V.
Active lifecycle — no LTB worry
No last-time-buy clock is ticking.