Dual pre-biased NPN in a SOT-363 — what you get
The Infineon BCR116SH6327XTSA1 packs two NPN transistors with integrated bias resistors into a single PG-SOT363-PO package. Each transistor has a 4.7 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), so you drop the two external resistors per channel from the BOM. Collector-emitter breakdown is rated at 50 V, continuous collector current at 100 mA, and the DC current gain minimum is 70 at 5 mA, 5 V. Transition frequency hits 150 MHz — fine for switching loads up to a few MHz, not for RF.
NRND — plan your BOM move now
That means it is still available for existing production runs, but the manufacturer is signalling a future end-of-life.
Switching performance at low drive current
The Vce saturation max of 300 mV at 500 µA base drive and 10 mA collector current means this part switches cleanly from logic-level outputs without extra base current margin. At 100 mA the saturation voltage will rise, but for typical loads under 50 mA the conduction loss stays under 30 mW per transistor — well within the 250 mW total package dissipation limit.