Dual pre-biased NPN in a SOT-363 footprint
The Infineon BCR116SE6327BTSA1 is a dual NPN digital transistor — two pre-biased transistors in a single PG-SOT363-PO package, each with integrated bias resistors R1 of 4.7 kΩ and R2 of 47 kΩ.
The 250 mW power dissipation ceiling is the total for both transistors in the SOT-363 package — not per channel. If each transistor switches 50 mA at a Vce(sat) of 300 mV, the per-transistor dissipation is about 15 mW, leaving plenty of headroom. But driving both transistors at 100 mA each with a Vce(sat) of 300 mV pushes the total to 60 mW, still well under the limit. The real constraint is the thermal resistance of the small plastic package; in a high-ambient environment (above 85 °C), derating should follow the typical SOT-363 curve. The 100 mA Ic(max) is a continuous rating — pulsed operation can go higher, but the 250 mW ceiling governs the safe area.