Dual pre-biased NPN in a SOT-363 footprint
The Infineon BCR116SE6327BTSA1 is a dual NPN digital transistor — two pre-biased transistors in a single PG-SOT363-PO package, each with integrated bias resistors R1 of 4.7 kΩ and R2 of 47 kΩ. This eliminates the need for external base and emitter resistors in switching and inverter circuits, saving board area in compact designs like relay drivers, LED indicators, and logic-level interfaces. The part is rated for a collector-emitter breakdown of 50 V and a continuous collector current of 100 mA, with a maximum power dissipation of 250 mW across the dual die.
Obsolete — sourcing through surplus and broker channels
Infineon has marked the BCR116SE6327BTSA1 as obsolete.
The 250 mW power dissipation ceiling is the total for both transistors in the SOT-363 package — not per channel. If each transistor switches 50 mA at a Vce(sat) of 300 mV, the per-transistor dissipation is about 15 mW, leaving plenty of headroom. But driving both transistors at 100 mA each with a Vce(sat) of 300 mV pushes the total to 60 mW, still well under the limit. The real constraint is the thermal resistance of the small plastic package; in a high-ambient environment (above 85 °C), derating should follow the typical SOT-363 curve. The 100 mA Ic(max) is a continuous rating — pulsed operation can go higher, but the 250 mW ceiling governs the safe area.