Pre-biased dual NPN for automotive switching
The Infineon BCR116SE6327 is a dual NPN pre-biased transistor in a single SOT-363 package, qualified to AEC-Q101 for automotive applications. Each transistor integrates a 4.7 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), eliminating the need for external bias components in low-current switching and interface circuits. Collector-emitter breakdown is rated at 50 V, continuous collector current at 100 mA, and the transition frequency reaches 150 MHz.
Bias resistor values set the switching threshold
The built-in 4.7 kΩ base resistor and 47 kΩ emitter-base resistor define the on/off threshold without external components. Minimum DC current gain is 70 at 5 mA, 5 V. Saturation voltage is 300 mV maximum at 500 µA base drive and 10 mA collector current. Collector cutoff current is 100 nA maximum, keeping leakage low in off-state automotive loads.
Package and footprint
Supplied in a PG-SOT363-6-1 package for surface-mount assembly. Power dissipation is rated at 250 mW.
