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Infineon Technologies BCR112WH6327XTSA1 — Discrete Semiconductors

Infineon BCR112WH6327XTSA1 NPN Pre-Biased Transistor, 50 V

MPNBCR112WH6327XTSA1
Last Buy

Infineon BCR112WH6327XTSA1 NPN pre-biased transistor, 50 V VCEO, 100 mA IC, 250 mW, 140 MHz fT, SC-70/SOT-323 package, Tape & Reel.

$0.0501Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR112WH6327XTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce20 @ 5mA, 5V
Power - max250 mW
Frequency140 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN in SC-70 — saves two resistors from the BOM

The Infineon BCR112WH6327XTSA1 is an NPN pre-biased transistor in a SC-70 (SOT-323) surface-mount package. It integrates a 4.7 kOhm base resistor (R1) and a 4.7 kOhm emitter-base resistor (R2) on-chip, eliminating two external passives from the board. Collector-emitter breakdown is rated 50 V, continuous collector current 100 mA, and the package dissipates up to 250 mW. Transition frequency is 140 MHz, and saturation voltage is 300 mV at 500 µA base drive with 10 mA collector current.

Last Buy — final procurement window is open

Infineon has classified the BCR112WH6327XTSA1 as Last Buy, meaning the manufacturer has announced end-of-life and this is the final production run. Buyers should secure lifetime or bridge-buy quantities now; after the last-time-buy window closes, supply will shift to independent-distribution surplus only.

Package and mounting

With both R1 and R2 at 4.7 kOhms, this transistor is configured for a fixed base-drive ratio. The pre-biased design sets the on/off threshold and guarantees the transistor is fully off when the input is low, without an external base resistor. It reflows cleanly with a standard lead-free profile; just watch the 250 mW dissipation limit if you're running it near 100 mA continuous in a tight layout.

Frequently asked questions

Is BCR112WH6327XTSA1 obsolete or still available for purchase?

Infineon has marked the BCR112WH6327XTSA1 as Last Buy. It is still available through the final production run, but once that window closes supply will be limited to surplus and broker channels. No official replacement is listed.

What are the base and emitter resistor values for BCR112WH6327XTSA1?

The base resistor (R1) is 4.7 kOhms and the emitter-base resistor (R2) is also 4.7 kOhms. These are integrated on-chip, so no external bias resistors are needed.