Dual pre-biased transistor in a SOT-363
The Infineon BCR10PNH6327XTSA1 packs one NPN and one PNP pre-biased transistor in a single SOT-363 package, each with integrated 10kΩ base and base-emitter resistors. That means two switching or driver channels in one footprint with no external bias components. Collector current is rated 100mA maximum, collector-emitter breakdown at 50V, and transition frequency hits 130MHz — fast enough for low-frequency switching and level-shifting up to a few MHz.
Last-time-buy — plan the BOM now
This part carries a Last Buy status from Infineon. If your BOM depends on it, the window for placing final orders is open now. After the LTB date passes, the only channel will be surplus and broker inventory — which is where we source it today, quoted against your RFQ with current availability confirmed at quote time.
The 10kΩ base resistor sets the on-drive current: with a 5V logic signal, base current sits around 400µA, enough to saturate the transistor at 10mA collector current with a Vce(sat) of 300mV typical. The 10kΩ base-emitter resistor ensures a clean off-state by shunting leakage — useful in noisy environments or when the drive source goes high-impedance. Power dissipation is capped at 250mW total for the dual package, so derate if both channels run near 100mA simultaneously.