Dual pre-biased transistor — 50 V, 100 mA, integrated 10 kΩ resistors
The Infineon BCR10PNE6327BTSA1 packs one NPN and one PNP pre-biased transistor in a single PG-SOT363-PO surface-mount package, each with 10 kΩ base and 10 kΩ emitter-base resistors built in. The 50 V collector-emitter breakdown voltage and 100 mA continuous collector current cover low-side switching and level-shifting in 5 V to 24 V industrial logic rails. The 130 MHz transition frequency keeps switching edges clean for PWM up to a few megahertz.
Obsolete — sourcing through independent distribution
Infineon has marked the BCR10PNE6327BTSA1 as obsolete.
250 mW power dissipation — thermal budget in SOT-363
The 250 mW total power limit (both transistors combined) sets the thermal ceiling in the compact SOT-363 footprint. For continuous operation near 100 mA on both channels, derating is required above 25 °C ambient. The PG-SOT363-PO package has a small thermal pad; board copper area helps pull heat out.