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Infineon Technologies BCR108WE6327BTSA1 — Discrete Semiconductors

BCR108WE6327BTSA1 NPN Pre-Biased Transistor, 50 V, 100 mA

MPNBCR108WE6327BTSA1
Obsolete

Infineon BCR108WE6327BTSA1 NPN pre-biased transistor, 50 V VCEO, 100 mA IC, 250 mW, SC-70 SOT-323 package, Tape & Reel.

Infineon Technologies BCR108WE6327BTSA1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR108WE6327BTSA1 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency - transition170 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

It integrates a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), so you can drive it directly from a microcontroller or logic output without external biasing components.

This part is officially obsolete per the manufacturer.

The 50 V VCEO and 100 mA IC are the hard limits — any replacement must meet or exceed these. The 250 mW power ceiling in the SC-70 package means thermal derating is tight; a higher-rated part in the same footprint may not be a drop-in if it dissipates more. The integrated 2.2 kΩ / 47 kΩ resistor divider sets the on/off threshold — a substitute with different resistor values will shift the base drive and may not switch at the same logic level.

Frequently asked questions

What is the replacement for BCR108WE6327BTSA1?

There is no official replacement listed by Infineon. You will need to evaluate a pin-compatible NPN pre-biased transistor with the same 2.2 kΩ base and 47 kΩ emitter-base resistors in SC-70 (SOT-323) package, or redesign the circuit around a discrete transistor and two resistors.