Dual pre-biased NPN array in a SOT-363 — the field-swap angle
The Infineon BCR108SH6327XTSA1 packs two NPN transistors with integrated bias resistors into a single PG-SOT363-PO package. Each transistor has a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), so you drop the external resistor pair for each channel. That saves board space and cuts the component count — handy when you are reworking a cramped board on site and do not want to hunt for two extra 0402s. Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a transition frequency of 170 MHz. The 250 mW power dissipation ceiling means it is for signal-level switching and drive, not power stages. Saturation voltage is 300 mV at 500 µA base and 10 mA collector — clean enough for logic-level interface work.
This part carries a Last Buy lifecycle status. That means Infineon has announced end-of-life and the final ordering window is open — once it closes, the part will no longer be manufactured. The closest path is to look at the broader BCR108 family or a generic dual pre-biased NPN array in SOT-363 from another vendor — but pin compatibility and resistor values need checking against your layout. The 2.2 kΩ base and 47 kΩ emitter resistor ratio is specific; a drop-in substitute must match that divider.