The Infineon BCR08PNH6727XTSA1 packs one NPN and one PNP pre-biased transistor in a single 6-pin SOT-363 package (PG-SOT363-PO). Each transistor integrates a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), eliminating the two external bias resistors normally needed per transistor — a four-resistor saving on the board. The pair is rated for a 50 V collector-emitter breakdown and 100 mA continuous collector current, with a 170 MHz transition frequency. The 250 mW total power limit applies to the whole package, not per channel, so the thermal budget splits between the two devices.
Last-buy status — plan your final order window
The BCR08PNH6727XTSA1 carries a Last Buy lifecycle status. That means Infineon has announced end-of-production and is accepting final orders on a fixed last-time-buy schedule. Once that window closes, the part will no longer be manufactured. If your BOM still calls for this exact order code, lock in the volume now to cover production and service spares. After the LTB date, supply shifts to independent-distributor inventory — we can source and quote it against an RFQ, but availability will shrink as stock is consumed.
Vce(sat) and hFE — what the switching specs mean
The saturation voltage is specified at 300 mV maximum with a 500 µA base current driving 10 mA collector current — typical for a low-side switch driving a relay coil, LED, or logic input. The DC current gain minimum is 70 at 5 mA collector current and 5 V Vce, which gives a solid base-drive margin for saturated switching.