BCR08PNH6433XTMA1

Infineon Technologies

Infineon BCR08PNH6433XTMA1, dual 1 NPN, 1 PNP pre-biased transistor, 50V Vce, 100mA Ic, 170MHz fT, 250mW, PG-SOT363-PO package, Tape & Reel.

Infineon Technologies BCR08PNH6433XTMA1
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[IN STOCK] In Stock: 10 pcs
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MOQ 5 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BCR08PNH6433XTMA1 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250mW
Frequency - transition170MHz
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)2.2kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Technical details

Dual pre-biased transistor for compact load switching

The Infineon BCR08PNH6433XTMA1 integrates one NPN and one PNP pre-biased transistor in a single PG-SOT363-PO package, each with built-in bias resistors — 2.2 kΩ base (R1) and 47 kΩ emitter-base (R2). This saves board space and reduces component count in applications like relay drivers, logic-level shifters, and low-current load switches where you'd otherwise need two discrete transistors plus four resistors.

With a 50 V Vce breakdown and 100 mA Ic rating, this part handles 24 V industrial logic rails and 12 V automotive loads with margin. The 170 MHz transition frequency means it switches cleanly into the low-MHz range — fine for PWM dimming or solenoid drive at a few hundred kHz. Saturation voltage is 300 mV at 500 µA base, 10 mA collector, so it stays cool in continuous-on applications.

Infineon lists the BCR08PNH6433XTMA1 as obsolete.

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