Dual pre-biased transistor in a compact SOT-363
The Infineon BCR08PNE6433HTMA1 is a dual pre-biased transistor combining one NPN and one PNP device in a single 6-VSSOP / SOT-363 surface-mount package. Each transistor integrates bias resistors — a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2) — eliminating external bias components for inverter, buffer, and level-shifting stages. Collector-emitter breakdown is rated at 50 V, with a maximum collector current of 100 mA per transistor and a transition frequency of 170 MHz. Total package power dissipation is 250 mW, which sets the thermal budget for both channels combined.
Obsolete — sourcing and replacement planning
The BCR08PNE6433HTMA1 carries an Obsolete product status.
