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Infineon Technologies BCR08PNE6433HTMA1 — Discrete Semiconductors

BCR08PNE6433HTMA1 Dual Pre-Biased Transistor, 50V, 100mA

MPNBCR08PNE6433HTMA1
Obsolete

Infineon BCR08PNE6433HTMA1, dual 1 NPN, 1 PNP pre-biased transistor, 50V VCEO, 100mA IC, 250mW, 170MHz, SOT-363, Tape & Reel.

StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR08PNE6433HTMA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250mW
Frequency170MHz
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)2.2kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Dual pre-biased transistor in a compact SOT-363

The Infineon BCR08PNE6433HTMA1 is a dual pre-biased transistor combining one NPN and one PNP device in a single 6-VSSOP / SOT-363 surface-mount package. Each transistor integrates bias resistors — a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2) — eliminating external bias components for inverter, buffer, and level-shifting stages. Collector-emitter breakdown is rated at 50 V, with a maximum collector current of 100 mA per transistor and a transition frequency of 170 MHz. Total package power dissipation is 250 mW, which sets the thermal budget for both channels combined.

Obsolete — sourcing and replacement planning

The BCR08PNE6433HTMA1 carries an Obsolete product status.

Frequently asked questions

What is the replacement for BCR08PNE6433HTMA1?

No official replacement order code is listed. A pin-compatible part within the BCR08PN base number family may be available, but the buyer must verify resistor values (2.2 kΩ base, 47 kΩ emitter-base) and package compatibility.

What are the specifications of BCR08PNE6433HTMA1?

It is a dual NPN/PNP pre-biased transistor rated at 50 V VCEO, 100 mA IC max per channel, 170 MHz transition frequency, 250 mW total power dissipation, in a 6-VSSOP / SOT-363 surface-mount package.

What package is BCR08PNE6433HTMA1?

The package is 6-VSSOP, also known as SC-88 or SOT-363, with a supplier device package designation of PG-SOT363-PO. It ships in Tape & Reel.