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Infineon Technologies BCR08PNE6327BTSA1 — Discrete Semiconductors

BCR08PNE6327BTSA1 dual NPN/PNP pre-biased transistor

MPNBCR08PNE6327BTSA1
Obsolete

Infineon BCR08PNE6327BTSA1 dual pre-biased transistor array, 1 NPN + 1 PNP, 50V VCEO, 100mA IC, 170MHz fT, 250mW, SOT-363 package.

$0.3900Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR08PNE6327BTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250mW
Frequency170MHz
PackageTape & Reel (TR) Cut Tape (CT)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)2.2kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Dual pre-biased transistor in SOT-363

The Infineon BCR08PNE6327BTSA1 integrates one NPN and one PNP pre-biased transistor in a single SOT-363 package, each with built-in bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ).

Infineon lists the BCR08PNE6327BTSA1 as obsolete. For BOM lines already qualified to this dual-transistor footprint, the only supply path is the surplus and broker market. If you are evaluating a new design, consider qualifying an active alternate while existing stock is still findable.

Transition frequency and gain headroom

With a transition frequency of 170 MHz and minimum DC current gain of 70 at 5 mA / 5 V, the BCR08PNE6327BTSA1 handles switching up to low-MHz ranges and provides consistent drive for loads in the tens of milliamps.

Frequently asked questions

Is BCR08PNE6327BTSA1 obsolete?

Yes, Infineon has marked the BCR08PNE6327BTSA1 as obsolete. No official replacement order code has been published. For new designs, plan to qualify an active alternate.

What are the specifications of BCR08PNE6327BTSA1?

It is a dual pre-biased transistor array with one NPN and one PNP in a SOT-363 package. Key ratings: 50 V VCEO, 100 mA IC max, 250 mW power dissipation, 170 MHz transition frequency, minimum hFE of 70 at 5 mA / 5 V, and built-in base resistor R1 of 2.2 kΩ with emitter-base resistor R2 of 47 kΩ.