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Infineon Technologies BCR 519 E6327 — Discrete Semiconductors

BCR 519 E6327 NPN Pre-Biased Transistor, 500 mA, 50 V

MPNBCR 519 E6327
Obsolete

Infineon BCR 519 E6327 NPN pre-biased transistor, 500 mA collector current, 50 V Vce breakdown, 100 MHz transition frequency, 4.7 kOhms base resistor, PG-SOT23 package, Surface Mount.

$0.2500Ref. price · indicative, final on quote
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MOQ1 pcs
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Specifications

BCR 519 E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 50mA, 5V
Power - max330 mW
Frequency100 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 2.5mA, 50mA

Product details

The Infineon BCR 519 E6327 is an NPN pre-biased transistor in a PG-SOT23 package. The integrated 4.7 kOhms base resistor (R1) eliminates the external base resistor, saving board space and reducing component count in switching and driver applications. With a 500 mA maximum collector current and 50 V Vce breakdown, it suits low-to-medium current loads in industrial control, relay drivers, and logic-level interface circuits. The 100 MHz transition frequency supports moderate-speed switching up to a few megahertz.

The 330 mW maximum power limit sets the thermal budget for this PG-SOT23 package. At 500 mA collector current, even a 300 mV Vce saturation drop dissipates 150 mW, leaving 180 mW headroom under the limit at 25 °C ambient. In a cramped board with limited copper area, derating is necessary — the junction-to-ambient thermal resistance of a SOT-23 on standard FR4 is typically around 300 °C/W, so the 330 mW ceiling corresponds to roughly a 100 °C junction rise above ambient. For continuous operation above 85 °C ambient, reduce the load current accordingly.

Obsolete — sourcing path for the BOM

Infineon lists the BCR 519 E6327 as obsolete. No official replacement order code is provided in the lifecycle record. For new designs, a pin-compatible pre-biased NPN in the same SOT-23 footprint should be selected after verifying base resistor value and current rating.

Frequently asked questions

What are the exact specifications of BCR 519 E6327?

The BCR 519 E6327 is an NPN pre-biased transistor with a 4.7 kOhms base resistor, 500 mA maximum collector current, 50 V Vce breakdown, 100 MHz transition frequency, 300 mV Vce saturation at 2.5 mA base and 50 mA collector, minimum DC current gain of 120 at 50 mA and 5 V, and a maximum collector cutoff current of 100 nA. It comes in a PG-SOT23 package and dissipates up to 330 mW.