Skip to main content
Infineon Technologies BCR 512 B6327 — Discrete Semiconductors
Infineon Technologies

BCR 512 B6327 NPN Pre-Biased Transistor, 500 mA, 50 V

MPNBCR 512 B6327
Obsolete

Infineon BCR 512 B6327, NPN - Pre-Biased, 500 mA Ic, 50 V Vce, 100 MHz ft, 330 mW, SOT-23-3, Tape & Reel.

$0.3300Ref. price · indicative, final on quote
BCR 512 B6327 datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR 512 B6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce60 @ 50mA, 5V
Power - max330 mW
Frequency100 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 2.5mA, 50mA

Product details

Pre-biased NPN for low-component-count switching

The BCR 512 B6327 is an NPN pre-biased transistor from Infineon, integrating two 4.7 kΩ resistors (R1 and R2) in a single SOT-23-3 package. It handles a continuous collector current up to 500 mA with a collector-emitter breakdown voltage of 50 V, and a transition frequency of 100 MHz. This part is designed for switching and interface applications where the built-in bias resistors eliminate the need for external base and emitter resistors, shrinking the BOM and board area.

Obsolete — plan your BOM move now

Infineon lists the BCR 512 B6327 as obsolete. If you are managing a legacy BOM line, now is the time to evaluate a replacement or secure a last-time-buy quantity.

Saturation voltage and gain — what matters for the switch

The Vce(sat) is specified at 300 mV maximum with a base current of 2.5 mA and collector current of 50 mA — a typical operating point for logic-level drive. The DC current gain (hFE) is a minimum of 60 at 50 mA and 5 V Vce, giving you a solid drive margin. The 100 nA maximum collector cutoff current (ICBO) ensures low leakage in off-state, important for battery-powered or high-impedance circuits.

Frequently asked questions

What is the replacement for BCR 512 B6327?

Infineon does not list a direct successor for the BCR 512 B6327. You will need to evaluate a functionally equivalent pre-biased NPN transistor in the same SOT-23-3 footprint with matching 4.7 kΩ bias resistors and 500 mA / 50 V ratings. We can help identify cross-reference candidates when you submit an RFQ.

What are the specifications of BCR 512 B6327?

It is an NPN pre-biased transistor with 500 mA maximum collector current, 50 V collector-emitter breakdown, 100 MHz transition frequency, 330 mW power dissipation, and two integrated 4.7 kΩ resistors. It comes in a surface-mount SOT-23-3 package.