PNP pre-biased transistor with integrated bias resistors
The Infineon BCR198TE6327 is a PNP pre-biased transistor in a SOT-23-3 package, rated for 50 V collector-emitter breakdown and 100 mA continuous collector current. The integrated 47 kOhm base resistor (R1) and 47 kOhm emitter-base resistor (R2) eliminate two external components per transistor, saving board space and reducing pick-and-place cost. With a transition frequency of 190 MHz and a minimum DC current gain of 70 at 5 mA, 5 V, this part handles switching and driver applications in automotive and industrial environments.
Package and footprint
Housed in the PG-SOT23-3-3 package (TO-236-3 / SC-59 / SOT-23-3 variant), the BCR198TE6327 uses the standard three-lead SOT-23 footprint. The 200 mW power dissipation limit sets the thermal budget.