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Infineon Technologies BCR 189L3 E6327 — Discrete Semiconductors

Infineon BCR 189L3 E6327 PNP Pre-Biased Transistor, 50 V

MPNBCR 189L3 E6327
End of Life

Infineon BCR 189L3 E6327 PNP pre-biased transistor, 50 V Vce, 100 mA Ic, 22 kΩ base resistor, 200 MHz fT, SOT-883 surface-mount package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR 189L3 E6327 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max250 mW
Frequency - transition200 MHz
PackageTape & Reel (TR)
CaseSC-101, SOT-883
Resistor - base (R1)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

The 200 MHz transition frequency means it can handle moderate-speed switching in DC-DC converters or signal paths without introducing phase lag.

Saturation voltage and gain — sizing the drive margin

The 300 mV maximum Vce saturation at 500 µA base drive and 10 mA collector current keeps conduction losses low — useful when the load current is a few milliamps and the logic output can only source a few hundred microamps. The 100 nA collector cutoff current ensures negligible leakage in the off state at room temperature.

Active lifecycle — no last-time-buy concern

There is no imminent end-of-life or last-time-buy risk for new designs.

Frequently asked questions

What is the maximum power dissipation of BCR 189L3 E6327?

The maximum power dissipation is 250 mW, which limits the continuous collector current at higher voltages.