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Infineon Technologies BCR 183T E6327 — Discrete Semiconductors
Infineon Technologies

Infineon BCR 183T E6327 PNP Pre-Biased Transistor, 50 V

MPNBCR 183T E6327
Obsolete

Infineon BCR 183T E6327 PNP pre-biased transistor, 50 V Vce, 100 mA Ic, 200 MHz fT, 250 mW, SC-75 SOT-416 package, Tape & Reel.

$0.1900Ref. price · indicative, final on quote
BCR 183T E6327 datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR 183T E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250 mW
Frequency200 MHz
PackageTape & Reel (TR)
CaseSC-75, SOT-416
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

What this PNP pre-biased transistor does

The Infineon BCR 183T E6327 is a PNP pre-biased transistor in a SC-75 (SOT-416) surface-mount package. It integrates two 10 kOhm resistors — one in series with the base (R1) and one from base to emitter (R2) — eliminating the need for external bias components in switching and driver circuits. The collector-emitter breakdown voltage is rated at 50 V, with a maximum collector current of 100 mA and a power dissipation of 250 mW. Its 200 MHz transition frequency supports moderate-speed switching applications.

Sourcing this obsolete part

Infineon has classified the BCR 183T as obsolete.

The two integrated 10 kOhm resistors set a fixed base current division ratio, simplifying the drive circuit but also fixing the turn-on threshold. With a minimum DC current gain (hFE) of 30 at 5 mA collector current and 5 V Vce, the transistor provides sufficient drive for loads up to 100 mA. The Vce saturation voltage is specified at 300 mV max with a 500 µA base current driving 10 mA collector current, giving a predictable on-state voltage drop for low-side switching. The 200 MHz transition frequency indicates it can handle switching speeds well above audio and typical power-management frequencies, though the pre-biased nature limits the designer's ability to optimize switching edges independently.

Frequently asked questions

What is a suitable replacement for BCR 183T E6327?

No official replacement has been designated by Infineon. A functionally similar PNP pre-biased transistor with the same 10 kOhm resistor values and SC-75 package would be the closest match, but pin compatibility and electrical limits must be verified against the original circuit requirements.

Does BCR 183T E6327 have a direct cross-reference to an NPN pre-biased?

No. The BCR 183T is a PNP pre-biased transistor. An NPN pre-biased part would have opposite polarity and cannot be a direct cross-reference without circuit redesign.

What is the difference between BCR 183T and BCR 183S?

The evidence does not provide a comparison between BCR 183T and BCR 183S. The base product number BCR 183 is shared, but the suffix indicates different package or electrical variants. Refer to the respective datasheets for specific differences.