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Infineon Technologies BCR 183L3 E6327 — Discrete Semiconductors
Infineon Technologies

Infineon BCR 183L3 E6327 PNP Pre-Biased Transistor, 50 V

MPNBCR 183L3 E6327
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Infineon BCR 183L3 E6327 PNP pre-biased transistor, 50 V VCEO, 100 mA IC, 10 kΩ base and emitter-base resistors, 200 MHz transition frequency, SOT-883 (PG-TSLP-3-4) package, surface mount.

BCR 183L3 E6327 datasheet
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Specifications

BCR 183L3 E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250 mW
Frequency200 MHz
PackageTape & Reel (TR)
CaseSC-101, SOT-883
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased PNP in a 1.0 × 0.6 mm footprint

The Infineon BCR 183L3 E6327 is a PNP digital transistor — a single transistor with two 10 kΩ resistors integrated into the package. The base resistor (R1) and the emitter-base resistor (R2) are both 10 kΩ, eliminating the need for external biasing components and saving board space. This part is housed in a SOT-883 (PG-TSLP-3-4) package, measuring roughly 1.0 × 0.6 mm, making it suitable for high-density, space-constrained designs such as portable electronics, IoT modules, and compact sensor interfaces.

50 V breakdown, 100 mA collector current — what it handles

With a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, this transistor suits low-power switching and level-shifting applications. The 200 MHz transition frequency (fT) indicates adequate speed for general-purpose switching up to a few MHz. Saturation voltage is specified at 300 mV maximum at 500 µA base current and 10 mA collector current, which is typical for a pre-biased PNP at light loads.

Frequently asked questions

What is the closest pin-compatible alternative to BCR 183L3 E6327?

Within the BCR 183 family, the BCR 183L3 is the SOT-883 variant. Other BCR 183 suffix options (e.g., BCR 183S in SOT-363) share the same 10 kΩ / 10 kΩ resistor network but differ in package footprint. For a direct SOT-883 replacement, the BCR 183L3 E6327 is the active order code; no exact second-source PNP pre-biased transistor in the same package is listed in this record.

What are the exact specifications for BCR 183L3 E6327?

Key specifications: PNP pre-biased transistor with 10 kΩ base resistor and 10 kΩ emitter-base resistor. Collector-emitter breakdown voltage 50 V, maximum collector current 100 mA, DC current gain (hFE) minimum 30 at 5 mA, 5 V, transition frequency 200 MHz, saturation voltage 300 mV max at 500 µA base, 10 mA collector, power dissipation 250 mW. Package: SOT-883 (PG-TSLP-3-4), surface mount, supplied in tape and reel.

How does BCR 183L3 E6327 compare to other pre-biased transistors?

Compared to a standard PNP transistor without bias resistors, the BCR 183L3 integrates the biasing network, saving two external resistors and the associated PCB area. Against other pre-biased PNP parts, the key differentiator here is the SOT-883 package — one of the smallest available for this function — and the 10 kΩ / 10 kΩ resistor ratio, which sets the on/off threshold. Parts with different resistor values (e.g., 47 kΩ / 47 kΩ) will switch at different input voltages.