Pre-biased PNP in a tiny leadless package
The BCR 169L3 E6327: The Infineon BCR 169L3 is a PNP pre-biased transistor — the base resistor R1 is 4.7 kOhms integrated on-chip, saving one external resistor per channel on the board. Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a maximum power dissipation of 250 mW. The 200 MHz transition frequency keeps it useful for fast switching up into the VHF range. Housed in the PG-TSLP-3-4 package (SC-101 / SOT-883 footprint), a three-lead leadless device for reflow assembly.
Vce saturation is specified at 300 mV maximum with 500 µA base drive and 10 mA collector current. That's a low-drop switch for a logic-level GPIO driving a relay coil, LED string, or small solenoid — the 300 mV drop at 10 mA means the load sees nearly the full supply rail. Minimum DC current gain (hFE) is 120 at 5 mA collector current and 5 V Vce, giving plenty of headroom for the pre-biased base resistor to saturate the transistor hard with a standard microcontroller output. Collector cut-off current (ICBO) is 100 nA maximum — low enough to avoid leakage issues in high-impedance nodes or micropower circuits where every nanoamp counts.
Lifecycle and sourcing
For new designs this is a safe choice with no imminent LTB risk.