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Infineon Technologies BCR 169F E6327 — Discrete Semiconductors

Infineon BCR 169F E6327 PNP Pre-Biased Transistor, 200 MHz

MPNBCR 169F E6327
Obsolete

Infineon BCR 169F E6327 PNP pre-biased transistor, SOT-723 package, 50 V VCEO, 100 mA Ic, 200 MHz transition frequency, 250 mW power dissipation.

Infineon Technologies BCR 169F E6327 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR 169F E6327 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max250 mW
Frequency - transition200 MHz
PackageTape & Reel (TR)
CaseSOT-723
Resistor - base (R1)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

PNP pre-biased transistor in SOT-723

The BCR 169F E6327: PNP pre-biased transistor in SOT-723 surface-mount package. Integrates a 4.7 kOhms base resistor (R1).

Key ratings for fit

Transition frequency of 200 MHz supports switching up to VHF ranges. DC current gain (hFE) minimum of 120 at 5 mA, 5 V ensures consistent drive capability. Saturation voltage of 300 mV at 500 µA base, 10 mA collector keeps on-state losses low. Maximum power dissipation of 250 mW in the SOT-723 package limits continuous operation in high-current or high-temperature environments — derate accordingly.

Obsolete — sourcing via independent channel

The BCR 169F E6327 is marked obsolete by Infineon. For new designs, evaluate current Infineon pre-biased transistor families in SOT-723 or similar small-signal packages.

Frequently asked questions

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