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Infineon Technologies BCR 166L3 E6327 — Discrete Semiconductors
Infineon Technologies

BCR 166L3 E6327 PNP Pre-Biased Transistor, 50 V, 100 mA

MPNBCR 166L3 E6327
End of Life

Infineon BCR 166L3 E6327 PNP pre-biased transistor, 50 V Vce, 100 mA Ic, 250 mW, R1=4.7 kΩ, R2=47 kΩ, fT=160 MHz, SOT-883 package, Tape & Reel.

BCR 166L3 E6327 datasheet
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Specifications

BCR 166L3 E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency160 MHz
PackageTape & Reel (TR)
CaseSC-101, SOT-883
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased PNP in a 1.0 × 0.6 mm footprint

The BCR 166L3 E6327: The Infineon BCR 166L3 is a PNP pre-biased transistor — the base and emitter-base resistors are integrated on-chip, saving two passive components per switch node. Key ratings: 50 V collector-emitter breakdown, 100 mA continuous collector current, and 250 mW power dissipation. Transition frequency is 160 MHz, so it handles modest-speed switching — think GPIO-driven loads, relay or LED drivers, level shifters, and signal inversion in industrial or consumer control boards.

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