PNP pre-biased – two fewer passives on the BOM
The Infineon BCR 164L3 E6327 is a PNP pre-biased transistor that integrates the bias resistors R1 (4.7 kΩ) and R2 (10 kΩ) inside the package, eliminating two external passives from the board. It is rated for a collector current of 100 mA and a collector-emitter breakdown voltage of 50 V, making it a fit for small-signal switching tasks like driving LEDs, relays, or logic-level loads from a microcontroller output. The 160 MHz transition frequency gives enough speed for PWM up to several tens of kilohertz without the parasitic ringing of a faster RF transistor.
50 V / 100 mA – the load budget boundary
The 50 V Vce breakdown and 100 mA Ic maximum set this part firmly in the small-signal category. At 10 mA collector current the saturation voltage is 300 mV typical with 500 µA base drive, which keeps dissipation low in a 250 mW package. The 100 nA collector cutoff (ICBO) means negligible leakage at room temperature, important for battery-powered circuits where every microamp counts. The 250 mW power limit is the thermal ceiling for the SOT-883 body – a design pulling close to 100 mA continuous should check the derating curve against ambient temperature.
Package and mounting
The BCR 164L3 E6327 comes in the SC-101 / SOT-883 package (Infineon calls it PG-TSLP-3-4), a three-lead leadless package roughly 1.0 × 0.6 mm. It is surface-mount only, shipped in Tape & Reel. The small footprint saves board space but demands a precise stencil and reflow profile – hand-soldering is impractical. For rework, a hot-air station with a fine nozzle and a low-velocity airflow is the usual approach; the package is MSL 1 per Infineon's standard, so no pre-bake is needed unless the reel has been exposed to high humidity for an extended period.
Active status – no LTB pressure
Infineon lists the BCR 164L3 E6327 as Active. For a BOM line using this pre-biased PNP, the supply outlook is stable through the franchised channel.