PNP pre-biased – two fewer passives on the BOM
The Infineon BCR 164L3 E6327 is a PNP pre-biased transistor that integrates the bias resistors R1 (4.7 kΩ) and R2 (10 kΩ) inside the package, eliminating two external passives from the board. The 160 MHz transition frequency gives enough speed for PWM up to several tens of kilohertz without the parasitic ringing of a faster RF transistor.
50 V / 100 mA – the load budget boundary
The 50 V Vce breakdown and 100 mA Ic maximum set this part firmly in the small-signal category. At 10 mA collector current the saturation voltage is 300 mV typical with 500 µA base drive, which keeps dissipation low in a 250 mW package. The 100 nA collector cutoff (ICBO) means negligible leakage at room temperature, important for battery-powered circuits where every microamp counts. The 250 mW power limit is the thermal ceiling for the SOT-883 body – a design pulling close to 100 mA continuous should check the derating curve against ambient temperature.
The BCR 164L3 E6327 comes in the SC-101 / SOT-883 package (Infineon calls it PG-TSLP-3-4), a three-lead leadless package roughly 1.0 × 0.6 mm. It is surface-mount only, shipped in Tape & Reel. The small footprint saves board space but demands a precise stencil and reflow profile – hand-soldering is impractical. For rework, a hot-air station with a fine nozzle and a low-velocity airflow is the usual approach; the package is MSL 1 per Infineon's standard, so no pre-bake is needed unless the reel has been exposed to high humidity for an extended period.
Active status – no LTB pressure
Infineon lists the BCR 164L3 E6327 as Active. For a BOM line using this pre-biased PNP, the supply outlook is stable through the franchised channel.
