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Infineon Technologies BCR 162L3 E6327 — Discrete Semiconductors

Infineon BCR 162L3 E6327 PNP Pre-Biased Transistor, 200 MHz

MPNBCR 162L3 E6327
End of Life

Infineon BCR 162L3 E6327, PNP - Pre-Biased, 50 V VCEO, 100 mA IC, 200 MHz fT, R1=R2=4.7 kΩ, 250 mW, SC-101/SOT-883, PG-TSLP-3-4, Surface Mount, Tape & Reel.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR 162L3 E6327 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce20 @ 5mA, 5V
Power - max250 mW
Frequency - transition200 MHz
PackageTape & Reel (TR)
CaseSC-101, SOT-883
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased PNP in a tiny leadless package

The BCR 162L3 E6327: PNP pre-biased digital transistor with R1 and R2 both 4.7 kOhms in SC-101 / SOT-883 leadless package (PG-TSLP-3-4). 50 V VCEO, 100 mA IC, 200 MHz fT.

Frequently asked questions

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What is the pinout of BCR 162L3 E6327?

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Does BCR 162L3 E6327 have a replacement?

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